Emerging nanoscale silicon devices taking advantage of nanostructure physics
نویسندگان
چکیده
This paper describes the present status of research on emerging nanoscale silicon devices that take full advantage of new physical phenomena which appear in silicon nanostructures. This new physics includes quantum effects that enhance the performance of MOS transistors and single-electron charging effects that add new function to conventional CMOS circuits. These physical phenomena may be used to extend the scaling and performance limits of conventional CMOS.
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ورودعنوان ژورنال:
- IBM Journal of Research and Development
دوره 50 شماره
صفحات -
تاریخ انتشار 2006